Inkjet Printed Circuits with 2D Semiconductor Inks for High?Performance Electronics

Air-stable semiconducting inks suitable for complementary logic are key to create low-power printed integrated circuits (ICs). High-performance printable electronic with 2D materials have the potential enable next generation of high performance low-cost digital electronics. Here, authors demonstrate air-stable, low voltage (<5 V) operation inkjet-printed n-type molybdenum disulfide (MoS2), and p-type indacenodithiophene-co-benzothiadiazole (IDT-BT) field-effect transistors (FETs), estimating an average switching time ?MoS2 ? 4.1 ?s MoS2 FETs. They achieve this by engineering high-quality air-stable IDT-BT inkjet-printing pairs then integrate FETs realize inverters a gain |Av| 4 when in resistive load configuration 1.4 configuration. These results represent enabling step towards ubiquitous long-term stable, ICs.